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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 5, Pages 585–587 (Mi phts6149)

This article is cited in 3 papers

Electronic properties of semiconductors

Ab initio calculations of phonon dispersion in CdGa$_{2}$Se$_{4}$

Z. A. Jahangirliab, T. G. Kerimovaa, N. A. Abdullaeva, I. A. Mamedovaa, N. T. Mamedova

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Azerbaijan Technical University, Baku

Abstract: The density of phonon states and the phonon dispersion in the Brillouin zone are calculated by the density functional method of. The displacements of atoms in the elementary cell are constructed for vibrations of the $A$, $B$, and $E$ symmetries. The calculated frequencies of optical phonons are consistent with the experimentally determined frequencies from the IR-absorption (infrared) and Raman-scattering spectra. In the $xy$ plane, the intersection of low-frequency optical phonons with acoustic phonons is observed.

Received: 20.10.2016
Accepted: 28.10.2016

DOI: 10.21883/FTP.2017.05.44410.8345


 English version:
Semiconductors, 2017, 51:5, 556–558

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