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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 5, Pages 676–679 (Mi phts6166)

This article is cited in 17 papers

Semiconductor physics

Laser ($\lambda$ = 809 nm) power converter based on GaAs

V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, N. Kh. Timoshina

Ioffe Institute, St. Petersburg

Abstract: Laser-power converters with a wavelength of $\lambda$ = 809 nm are fabricated on the basis of single-junction AlGaAs/GaAs heterostructures grown by the method of liquid-phase epitaxy (LPE). Photovoltaic modules with an operating voltage of 4 V for converting radiation of various densities are developed and tested. Two approaches—without the use of optical concentrating systems and with the use of Fresnel lenses are investigated. A monochromatic conversion efficiency exceeding 44% is attained with a photovoltaic module based on 64 laser-radiation converters 0.04 cm$^2$ in area and a concentrating system made of a quartz-lens matrix.

Received: 13.10.2016
Accepted: 18.10.2016

DOI: 10.21883/FTP.2017.05.44428.8427


 English version:
Semiconductors, 2017, 51:5, 645–648

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© Steklov Math. Inst. of RAS, 2024