Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters

The comparative characteristics of photovoltaic converters (of laser radiation) based on gallium arsenide with a $p$-type emitter formed by gas-phase diffusion in the presence of surfactants (isovalent impurities) and without them are reported. It is shown that the use of indium and phosphorus in the process of the formation of a $p$–$n$ junction significantly affects the characteristics of the obtained devices.