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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 4, Pages 472–476 (Mi phts6180)

Amorphous, glassy, organic semiconductors

Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide

A. V. Marchenkoa, E. I. Terukovb, A. Yu. Egorovac, V. S. Kiseleva, P. P. Seregina

a Herzen State Pedagogical University of Russia, St. Petersburg
b Ioffe Institute, St. Petersburg
c Saint-Petersburg State Mining Institute

Abstract: Impurity iron atoms in vitreous arsenic-selenide As$_2$Se$_3$ films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of $\ge$ 3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.

Received: 22.09.2016
Accepted: 03.10.2016

DOI: 10.21883/FTP.2017.04.44338.8411


 English version:
Semiconductors, 2017, 51:4, 449–453

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