R. R. Guseinov, V. A. Tanriverdiyev, G. Kipshidze, E. N. Aliyeva, Kh. V. Aliguliyeva, N. A. Abdullaev, N. T. Mamedov, “In InAs$_{1-x}$Sb$_{x}$ heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 4,Pages 551

This article is cited in 4 papers

Manufacturing, processing, testing of materials and structures

In InAs$_{1-x}$Sb$_{x}$ heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

R. R. Guseinov^a, V. A. Tanriverdiyev^a, G. Kipshidze^b, E. N. Aliyeva^a, Kh. V. Aliguliyeva^a, N. A. Abdullaev^a, N. T. Mamedov^a

^a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
^b Stony Brook University, New York, USA

Abstract: Unrelaxed InAs$_{1-x}$Sb$_{x}$ ($x$ = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs$_{1-x}$Sb$_{x}$ alloys is established.

Received: 07.09.2016
Accepted: 19.09.2016

DOI: 10.21883/FTP.2017.04.44351.8401