Abstract:
The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic $a$-SiO$_{x}$/SiO$_2$, $a$-SiO$_{x}$/Àl$_2$Î$_3$, and $a$-SiO$_{x}$/ZrO$_2$ compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100$^\circ$C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.