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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 2, Pages 166–171 (Mi phts6226)

This article is cited in 1 paper

Electronic properties of semiconductors

Field diffusion in disordered organic materials under conditions of occupied deep states

V. R. Nikitenko, A. Yu. Kudrov

National Engineering Physics Institute "MEPhI", Moscow

Abstract: A simple analytical model of the field-diffusion coefficient is developed for moderate carrier concentrations. Hopping transport is described by the multiple-trapping model based on the transport-level concept. A continuity equation with a diffusion coefficient depending on carrier concentration is obtained, the time dependence of the field-diffusion coefficient under non-steady-state conditions is found. The time intervals in which deep state population affects the mobility and diffusion coefficient under conditions of time-of-flight experiments are estimated. It is shown that the field-diffusion coefficient increases in a long time interval while the mobility is unchanged, which is reminiscent of a similar case of nonequilibrium initial carrier generation at the low-concentration limit.

Received: 16.05.2016
Accepted: 16.06.2016

DOI: 10.21883/FTP.2017.02.44098.8166


 English version:
Semiconductors, 2017, 51, 158–162

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