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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 2, Pages 172–176 (Mi phts6227)

This article is cited in 5 papers

Electronic properties of semiconductors

Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields

A. I. Veingera, T. V. Tisneka, I. V. Kochmana, V. I. Okulovb

a Ioffe Institute, St. Petersburg
b Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg

Abstract: The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.

Received: 28.06.2016
Accepted: 03.07.2016

DOI: 10.21883/FTP.2017.02.44099.8362


 English version:
Semiconductors, 2017, 51:2, 163–167

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