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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 2, Pages 216–221 (Mi phts6236)

Micro- and nanocrystalline, porous, composite semiconductors

Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al$_{2}$O$_{3}$ of different thicknesses

R. G. Valeeva, A. L. Trigubab, A. I. Chukavinc, A. N. Beltyukovc

a Physical-Technical Institute Ural Branch of RAS
b National Research Centre "Kurchatov Institute", Moscow
c Physical-Technical Institute of the Ural Branch of the Russian Academy of Sciences

Abstract: We present EXAFS, XANES, and X-ray diffraction data on nanoscale ZnS:Cu (5 at %) structures fabricated by the thermal deposition of a ZnS and Cu powder mixture in porous anodic alumina matrices with a pore diameter of 80 nm and thicknesses of 1, 3, and 5 $\mu$m. The results obtained are compared with data on ZnS:Cu films deposited onto a polycor surface. According to X-ray diffraction data, the samples contain copper and zinc compounds with sulfur (Cu$_2$S and ZnS, respectively); the ZnS compound is in the cubic (sphalerite) and hexagonal (wurtzite) modifications. EXAFS and XANES studies at the K absorption edges of zinc and copper showed that, in samples deposited onto polycor and alumina with thicknesses of 3 and 5 $\mu$m, most copper atoms form the Cu$_2$S compound, while, in the sample deposited onto a 1-$\mu$m-thick alumina layer, copper atoms form metallic particles on the sample surface. Copper crystals affect the Zn–S interatomic distance in the sample with a 1-$\mu$m-thick porous Al$_{2}$O$_{3}$ layer; this distance is smaller than in the other samples.

Received: 06.06.2016
Accepted: 16.06.2016

DOI: 10.21883/FTP.2017.02.44108.8344


 English version:
Semiconductors, 2017, 51:2, 207–212

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