S. N. Yurkov, T. T. Мnatsakanov, M. E. Levinshteĭn, A. G. Tandoev, J. W. Palmour, “Analysis of the impact of non-1D effects on the gate switch-on current in 4<nobr>$H$</nobr>-SiC thyristors”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2,Pages <nobr>234

Semiconductor physics

Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors

S. N. Yurkov^a, T. T. Мnatsakanov^a, M. E. Levinshteĭn^b, A. G. Tandoev^a, J. W. Palmour^c

^a Russian Electrotechnical Institute Named after V. I. Lenin
^b Ioffe Institute, St. Petersburg
^c Wolfspeed, USA

Abstract: The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4$H$-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4$H$-SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors.

Received: 24.05.2016
Accepted: 14.06.2016

DOI: 10.21883/FTP.2017.02.44111.8335