N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. Lazarenko, A. Yu. Egorov, M. V. Maksimov, È. I. Moiseev, A. E. Zhukov, “Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4<nobr>$^\circ$</nobr> substrates”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2,Pages <nobr>276

This article is cited in 4 papers

Manufacturing, processing, testing of materials and structures

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates

N. V. Kryzhanovskaya^abc, Yu. S. Polubavkina^a, V. N. Nevedomskiy^c, E. V. Nikitina^a, A. Lazarenko^a, A. Yu. Egorov^d, M. V. Maksimov^abc, È. I. Moiseev^a, A. E. Zhukov^ab

^a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg
^d St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4$^\circ$ are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than $\sim$2 $\times$ 10$^{8}$ cm$^{-2}$ is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.

Received: 26.07.2016
Accepted: 01.08.2016

DOI: 10.21883/FTP.2017.02.44118.8375