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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 2, Page 281 (Mi phts6247)

This article is cited in 1 paper

Papers published in the English version of the journal

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures $n$-InGaAs/GaAs after IR-illumination

Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin

Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg, Russia

Abstract: The dependences of the longitudinal and Hall resistances on a magnetic field in $n$-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields $B$ = 0–16 T and temperatures $T$ = 0.05–4.2 K.
Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.

Received: 26.04.2016
Accepted: 20.06.2016

Language: English

DOI: 10.21883/FTP.2017.02.44119.8302


 English version:
Semiconductors, 2017, 51:2, 272–278

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