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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 1, Pages 22–25 (Mi phts6252)

This article is cited in 1 paper

Electronic properties of semiconductors

Lifetime of excess electrons in Cu–Zn–Sn–Se powders

G. F. Novikova, M. V. Gapanovicha, V. F. Gremenokb, K. V. Bocharova, W.-T. Tsaic, Ming-Jer Jengc, Liann-Be Changc

a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Republic of Belarus
c Chang Gung University, Taoyuan, Taiwan

Abstract: The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to $E_{a}$ $\sim$ 0.054 eV.

Received: 13.04.2016
Accepted: 28.04.2016

DOI: 10.21883/FTP.2017.01.43990.8274


 English version:
Semiconductors, 2017, 51:1, 18–22

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