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Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 1, Pages 75–78 (Mi phts6261)

Semiconductor physics

Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

S. M. Nekorkina, B. N. Zvonkova, N. V. Baidusa, N. V. Dikarevaa, O. V. Vikhrovaa, A. A. Afonenkob, D. V. Ushakovb

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Belarusian State University, Minsk

Abstract: The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.

Received: 05.04.2016
Accepted: 12.04.2016

DOI: 10.21883/FTP.2017.01.43999.8258


 English version:
Semiconductors, 2017, 51:1, 73–77

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