RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 1, Pages 124–132 (Mi phts6269)

Manufacturing, processing, testing of materials and structures

Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types

P. V. Seredina, A. S. Len'shina, I. N. Arsent'evb, A. V. Zhabotinskyb, D. N. Nikolaevb, I. S. Tarasovb, V. V. Shamakhovb, Tatiana Prutskijc, Harald Leisted, Monika Rinked

a Voronezh State University
b Ioffe Institute, St. Petersburg
c Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Mexico
d Karlsruhe Nano Micro Facility, Eggenstein-Leopoldshafen, Germany

Abstract: The structural, optical, and energy properties of epitaxial Al$_{x}$Ga$_{1-x}$As : Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al$_{x}$Ga$_{1-x}$As : Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.

Received: 02.06.2016
Accepted: 14.06.2016

DOI: 10.21883/FTP.2017.01.44007.8342


 English version:
Semiconductors, 2017, 51:1, 122–130

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024