V. N. Trukhin, A. D. Bouravlev, I. A. Mustafin, G. E. Cirlin, D. I. Kuritsyn, V. V. Rumyantsev, S. V. Morozov, J. P. Kakko, T. Huhtio, H. Lipsanen, “Resonant features of the terahertz generation in semiconductor nanowires”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1587

This article is cited in 5 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Resonant features of the terahertz generation in semiconductor nanowires

V. N. Trukhin^ab, A. D. Bouravlev^c, I. A. Mustafin^ab, G. E. Cirlin^c, D. I. Kuritsyn^d, V. V. Rumyantsev^d, S. V. Morozov^ce, J. P. Kakko^f, T. Huhtio^f, H. Lipsanen^f

^a Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^e Lobachevsky State University of Nizhny Novgorod
^f Department of Micro- and Nanosciences, Micronova, Aalto University, Aalto, Finland

Abstract: The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk $p$-InAs, which is one of the most effective coherent terahertz emitters.

Received: 27.04.2016
Accepted: 10.05.2016