N. V. Sibirev, A. A. Koryakin, V. G. Dubrovskii, “On a new method of heterojunction formation in III–V nanowires”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1592

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

On a new method of heterojunction formation in III–V nanowires

N. V. Sibirev^ab, A. A. Koryakin^bc, V. G. Dubrovskii^bcde

^a Peter the Great St. Petersburg Polytechnic University
^b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Ioffe Institute, St. Petersburg
^e Saint Petersburg State University

Abstract: The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor–liquid–solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.

Received: 27.04.2016
Accepted: 10.05.2016