E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, V. I. Egorkin, A. V. Nezhentsev, A. V. Sakharov, A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, G. V. Medvedev, “Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1599

This article is cited in 5 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

E. A. Tarasova^a, E. S. Obolenskaya^a, A. V. Hananova^a, S. V. Obolensky^a, V. E. Zemlyakov^b, V. I. Egorkin^b, A. V. Nezhentsev^a, A. V. Sakharov^c, A. F. Tsatsul'nikov^c, V. V. Lundin^c, E. E. Zavarin^c, G. V. Medvedev^d

^a Lobachevsky State University of Nizhny Novgorod
^b National Research University of Electronic Technology
^c Ioffe Institute, St. Petersburg
^d JSC RPE Salut, Nizhny Novgorod, Russia

Abstract: The sensitivity of classical $n^{+}/n^{-}$ GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to $\gamma$-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

Received: 27.04.2016
Accepted: 10.05.2016