S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov, “Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages 1615

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XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer

S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov

National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The properties of metal–insulator–semiconductor (MIS) structures based on $n$-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/$n$-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

Received: 27.04.2016
Accepted: 10.05.2016