I. V. Shtrom, A. D. Bouravlev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Sotnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen, “Surface passivation of GaAs nanowires by the atomic layer deposition of AlN”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1644

This article is cited in 1 paper

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

I. V. Shtrom^abc, A. D. Bouravlev^abc, Yu. B. Samsonenko^bcd, A. I. Khrebtov^bd, I. P. Sotnikov^abc, R. R. Reznik^bde, G. E. Cirlin^dcb, V. Dhaka^f, A. Perros^f, H. Lipsanen^f

^a Ioffe Institute, St. Petersburg
^b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^e Peter the Great St. Petersburg Polytechnic University
^f Aalto University, Finland

Abstract: It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-$\mathring{\mathrm{A}}$-thick AlN layer.

Received: 27.04.2016
Accepted: 10.05.2016