S. V. Gudina, Yu. G. Arapov, A. P. Savelyev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil'evskii, A. N. Vinichenko, “Quantum Hall effect and hopping conductivity in <nobr>$n$</nobr>-InGaAs/InAlAs nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1669

This article is cited in 2 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures

S. V. Gudina^a, Yu. G. Arapov^a, A. P. Savelyev^a, V. N. Neverov^a, S. M. Podgornykh^ab, N. G. Shelushinina^a, M. V. Yakunin^ab, I. S. Vasil'evskii^c, A. N. Vinichenko^c

^a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
^b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
^c National Engineering Physics Institute "MEPhI", Moscow

Abstract: The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the $n$-InGaAs/InAlAs heterostructures at temperatures of $T$ = (1.8–30) K in magnetic fields up to $B$ = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.

Received: 17.04.2016
Accepted: 10.05.2016