V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko, F. Teppe, “Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1679

This article is cited in 7 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

V. V. Rumyantsev^ab, M. A. Fadeev^ab, S. V. Morozov^ab, A. A. Dubinov^ab, K. E. Kudryavtsev^ab, A. M. Kadykov^ac, I. V. Tuzov^b, S. A. Dvoretskii^d, N. N. Mikhailov^de, V. I. Gavrilenko^ba, F. Teppe^c

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Laboratoire Charles Coulomb, Universite Montpellier II, Montpellier, France
^d Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^e Novosibirsk State University

Abstract: The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 $\mu$m occurs at a low threshold pump intensity ($\sim$100 W/cm$^2$) at 20 K. In the $p$-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.

Received: 27.04.2016
Accepted: 10.05.2016