N. A. Baidakova, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, E. E. Morozova, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1685

This article is cited in 1 paper

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

N. A. Baidakova^a, A. V. Novikov^ab, M. V. Shaleev^a, D. V. Yurasov^a, E. E. Morozova^a, D. V. Shengurov^a, Z. F. Krasil'nik^ba

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The electroluminescence of structures with self-assembled Ge(Si) nanoislands grown on relaxed SiGe/Si(001) buffer layers and confined between strained Si layers is studied for the first time. The electroluminescence signal from the structures is observed in the wavelength range from 1.6 to 2.0 $\mu$m, i.e., at longer wavelengths compared to those in the case of structures with Ge(Si) islands formed on Si (001) substrates. This give grounds to consider the structures with Ge(Si) islands confined between strained Si layers as candidates for the production of Si-based sources of emission at wavelengths of $>$ 1.55 $\mu$m.

Received: 27.04.2016
Accepted: 10.05.2016