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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 12, Pages 1697–1700 (Mi phts6296)

This article is cited in 7 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 $\mu$m

K. V. Marem'yaninab, V. V. Rumyantsevba, A. V. Ikonnikovba, L. S. Bovkunb, E. G. Chizhevskiic, I. I. Zasavitskiic, V. I. Gavrilenkoab

a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow

Abstract: Diffusion injection lasers based on Pb$_{1-x}$Sn$_{x}$Se alloy, emitting in a wide spectral range of 10–46.5 $\mu$m depending on the composition and temperatures are fabricated. A technology for growing high-quality single crystals from the vapor phase under conditions of free growth is developed. The dependences of the total emission intensity on the pump current and the emission spectra of injection lasers based on Pb$_{1-x}$Sn$_{x}$Se are studied. In these samples, lasing of long-wavelength radiation to a record wavelength of 46.5 $\mu$m is achieved.

Received: 27.04.2016
Accepted: 10.05.2016


 English version:
Semiconductors, 2016, 50:12, 1669–1672

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