G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, I. P. Sotnikov, “Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11,Pages <nobr>1441

This article is cited in 15 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

G. E. Cirlin^abc, I. V. Shtrom^adb, R. R. Reznik^ae, Yu. B. Samsonenko^ab, A. I. Khrebtov^a, A. D. Bouravlev^abd, I. P. Sotnikov^abfd

^a St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
^b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Ioffe Institute, St. Petersburg
^e Peter the Great St. Petersburg Polytechnic University
^f Saint Petersburg Electrotechnical University "LETI"

Abstract: Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.

Received: 27.04.2016
Accepted: 10.05.2016