A. N. Yablonskii, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus, Z. F. Krasil'nik, “Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11,Pages <nobr>1455

This article is cited in 3 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

A. N. Yablonskii^ab, S. V. Morozov^ab, D. M. Gaponova^ab, V. Ya. Aleshkin^ab, V. G. Shengurov^b, B. N. Zvonkov^b, O. V. Vikhrova^b, N. V. Baidus^b, Z. F. Krasil'nik^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 $\mu$m, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 $\mu$m. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

Received: 27.04.2016
Accepted: 10.05.2016