M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, P. B. Demina, Yu. V. Usov, D. E. Nikolichev, R. N. Kriukov, S. Yu. Zubkov, “Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11,Pages <nobr>1463

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

M. V. Dorokhin^a, D. A. Pavlov^b, A. I. Bobrov^b, Yu. A. Danilov^a, V. P. Lesnikov^a, B. N. Zvonkov^a, A. V. Zdoroveyshchev^a, A. V. Kudrin^b, P. B. Demina^a, Yu. V. Usov^b, D. E. Nikolichev^b, R. N. Kriukov^b, S. Yu. Zubkov^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Department of Physics, University of Nizhny Novgorod

Abstract: The crystal structure, composition, and magnetic, and electric-transport properties of Mn$_{x}$Ga$_{y}$ layers deposited onto a GaAs surface by pulsed laser deposition in a hydrogen atmosphere, pulsed laser deposition in vacuum, and electron-beam evaporation in vacuum are investigated. It is shown that the features of each technique affect the composition and crystal structure of the formed layers, and the degree of abruptness and crystalline quality of the heterointerface. Apparently, the composition and crystal structure are responsible for modification of the ferromagnetic properties. The defects in the heterointerface affect the properties of the Mn$_{x}$Ga$_{y}$/GaAs diode structure, in particular, the height of the Schottky diode potential barrier.

Received: 27.04.2016
Accepted: 10.05.2016