I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, A. V. Zdoroveyshchev, A. V. Kudrin, D. A. Pavlov, Yu. V. Usov, “On the crystal structure and thermoelectric properties of thin MnSi<nobr>$_{x}$</nobr> films”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11,Pages <nobr>1473

This article is cited in 1 paper

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

On the crystal structure and thermoelectric properties of thin MnSi$_{x}$ films

I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, A. V. Zdoroveyshchev, A. V. Kudrin, D. A. Pavlov, Yu. V. Usov

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: Thin (25 nm) Si$_{1-x}$Mn$_{x}$/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.

Received: 27.04.2016
Accepted: 10.05.2016