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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 11, Pages 1554–1560 (Mi phts6324)

This article is cited in 9 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Magnetospectroscopy of double HgTe/CdHgTe quantum wells

L. S. Bovkuna, S. S. Krishtopenkoab, A. V. Ikonnikovac, V. Ya. Aleshkinac, A. M. Kadykovab, S. Ruffenachb, C. Consejob, F. Teppeb, W. Knapb, M. Orlitad, B. Piotd, M. Potemskid, N. N. Mikhailovec, S. A. Dvoretskiie, V. I. Gavrilenkoca

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Laboratoire Charles Coulomb UMR 5221, Montpellier, France
c Lobachevsky State University of Nizhny Novgorod
d Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, Grenoble, France
e Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 $\times$ 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.

Received: 18.05.2016
Accepted: 23.05.2016


 English version:
Semiconductors, 2016, 50:11, 1532–1538

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