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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 10, Pages 1380–1386 (Mi phts6343)

This article is cited in 11 papers

Semiconductor physics

Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

L. V. Asryana, F. I. Zubovbc, N. V. Kryzhanovskayabc, M. V. Maksimovcb, A. E. Zhukovbc

a Virginia Polytechnic Institute and State University, Blacksburg, Virginia, USA
b Peter the Great St. Petersburg Polytechnic University
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Abstract: The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current and remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.

Received: 29.02.2016
Accepted: 04.04.2016


 English version:
Semiconductors, 2016, 50:10, 1362–1368

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