R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov, “Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10,Pages <nobr>1395

This article is cited in 20 papers

Semiconductor physics

Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

R. A. Khabibullin^a, N. V. Shchavruk^a, A. Yu. Pavlov^a, D. S. Ponomarev^a, K. N. Tomosh^a, R. R. Galiev^a, P. P. Maltsev^a, A. E. Zhukov^bc, G. E. Cirlin^cb, F. I. Zubov^c, Zh. I. Alferov^bc

^a Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
^b Saint-Petersburg Scientific Center, Russian Academy of Sciences
^c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Abstract: The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped $n^+$-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 $\mu$m wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl$_{3}$/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

Received: 07.04.2016
Accepted: 12.04.2016