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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 10, Pages 1408–1413 (Mi phts6347)

This article is cited in 4 papers

Semiconductor physics

Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

M. A. Bobrova, N. A. Maleeva, S. A. Blokhina, A. G. Kuz'menkovab, A. A. Blokhina, A. P. Vasil'evab, Yu. A. Gusevaa, M. M. Kulaginaa, Yu. M. Zadiranova, S. I. Troshkova, V. Lisakac, V. M. Ustinovab

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture are studied. It is found that radiation polarization is always directed along the minor diagonal of the rhomboidal aperture (along the [$\bar1$10] direction) for all single-mode VCSELs. The numerical simulation of carrier transport does not reveal the significant anisotropy of carrier injection to the active region. Furthermore, an analysis of the spatial distribution of the fundamental mode for two orthogonal polarizations within an effective waveguide model shows close transverse optical-confinement factors. Optical loss anisotropy in the asymmetric microcavity and/or gain anisotropy in the strained active region are the most likely mechanisms responsible for fixing the polarization.

Received: 14.04.2016
Accepted: 20.04.2016


 English version:
Semiconductors, 2016, 50:10, 1390–1395

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