RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 10, Pages 1425–1428 (Mi phts6350)

This article is cited in 5 papers

Semiconductor physics

Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency

F. I. Zubovab, N. V. Kryzhanovskayaab, È. I. Moiseeva, Yu. S. Polubavkinaa, O. I. Simchuka, M. M. Kulaginac, Yu. M. Zadiranovc, S. I. Troshkovc, A. A. Lipovskiiab, M. V. Maksimovabc, A. E. Zhukovab

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg

Abstract: The spectral, threshold, and power characteristics of a microdisk laser 31 $\mu$m in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold current density is 0.58 kA/cm$^2$, the subthreshold linewidth of the whispering-gallery mode is 50 pm at a wavelength lying in the range of 1.26–1.27 $\mu$m. The total power emitted into free space reaches $\sim$0.1 mW in the cw mode, whereas the radiation power of the whispering-gallery modes is $\sim$2.8%.

Received: 18.04.2016
Accepted: 28.04.2016


 English version:
Semiconductors, 2016, 50:10, 1408–1411

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024