I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova, Yu. M. Shernyakov, A. V. Savel'ev, I. A. Nyapshaev, A. Yu. Egorov, “On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10,Pages <nobr>1429

This article is cited in 9 papers

Semiconductor physics

On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

I. I. Novikov^ab, L. Ya. Karachinsky^ab, E. S. Kolodeznyi^b, V. E. Bugrov^b, A. S. Kurochkin^ab, A. G. Gladyshev^ab, A. V. Babichev^ab, I. M. Gadzhiev^bc, M. S. Buyalo^bc, Yu. M. Zadiranov^c, A. A. Usikova^c, Yu. M. Shernyakov^c, A. V. Savel'ev^b, I. A. Nyapshaev^b, A. Yu. Egorov^ba

^a Connector Optics LLC, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Ioffe Institute, St. Petersburg

Abstract: The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm$^{-1}$ and a low transparency current density of 46 A/cm$^2$ per quantum well.

Received: 10.05.2016
Accepted: 10.05.2016