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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 10, Pages 1434–1438 (Mi phts6352)

This article is cited in 5 papers

Manufacturing, processing, testing of materials and structures

Investigation of the fabrication processes of AlGaN/AlN/GaN 团桃s with in situ Si$_{3}$N$_{4}$ passivation

K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, P. P. Maltsev

Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow

Abstract: The optimum mode of the in situ plasma-chemical etching of a Si$_{3}$N$_{4}$ passivating layer in C$_{3}$F$_{8}$/O$_{2}$ medium is chosen for the case of fabricating AlGaN/AlN/GaN 团桃s. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si$_{3}$N$_{4}$ growth together with the heterostructure in one process on the AlGaN/AlN/GaN 团桃 characteristics, transistors with gates without the insulator and with gates through Si$_{3}$N$_{4}$ slits are fabricated. The highest drain current of the AlGaN/AlN/GaN 团桃 at 0 V at the gate is shown to be 1.5 times higher in the presence of Si$_{3}$N$_{4}$ than without it.

Received: 07.04.2016
Accepted: 12.04.2016


 English version:
Semiconductors, 2016, 50:10, 1416–1420

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