A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, S. A. Blokhin, A. A. Blokhin, A. M. Nadtochiy, A. S. Kurochkin, A. Yu. Egorov, “Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9,Pages <nobr>1208

This article is cited in 7 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

A. G. Gladyshev^a, I. I. Novikov^ab, L. Ya. Karachinsky^ab, D. V. Denisov^ab, S. A. Blokhin^c, A. A. Blokhin^c, A. M. Nadtochiy^c, A. S. Kurochkin^b, A. Yu. Egorov^ab

^a Connector Optics LLC, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Ioffe Institute, St. Petersburg

Abstract: The optical properties of elastically strained semiconductor heterostructures with InGaAs/InGaAlAs quantum wells (QWs), intended for use in the formation of the active region of lasers emitting in the spectral range 1520–1580 nm, are studied. Active regions with varied lattice mismatch between the InGaAs QWs and the InP substrate are fabricated by molecular beam epitaxy. The maximum lattice mismatch for the InGaAs QWs is +2%. The optical properties of the elastically strained InGaAlAs/InGaAs/InP heterostructures are studied by the photoluminescence method in the temperature range from 20 to 140$^\circ$C at various power densities of the excitation laser. Investigation of the optical properties of InGaAlAs/InGaAs/InP experimental samples confirms the feasibility of using the developed elastically strained heterostructures for the fabrication of active regions for laser diodes with high temperature stability.

Received: 16.03.2016
Accepted: 23.03.2016