On methods of determining the band gap of semiconductor structures with $p$–$n$ junctions

The possibility of determining the band gap of homogeneous $p$–$n$ structures from the properties of the current–voltage characteristics at two temperatures (room temperature and temperatures 30 to 50$^\circ$C higher) is shown. A working formula for the calculation is derived, and practical application of the formula in determining the band gap is illustrated by the example of $p$–$n$ structures based on silicon, gallium arsenide, and gallium phosphide. The results are in agreement with commonly accepted data with an accuracy of 1%. In addition, the possibility of determining the band gap of homogeneous $p$–$n$ structures from the capacitance–voltage characteristics recorded at the above-indicated temperatures is shown.