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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 8, Pages 1100–1105 (Mi phts6394)

This article is cited in 1 paper

Semiconductor physics

Dynamic thermoelectric model of a light-emitting structure with a current spreading layer

V. A. Sergeev, A. M. Hodakov

Ul'yanovsk Branch of Institute of Radioengineering and Electronics, Russian Academy of Sciences

Abstract: The non-stationary thermoelectric model of the axisymmetric heterostructure of a light-emitting device is considered taking into account positive feedback mechanisms and the effect of the current-spreading-layer resistance. Taking into account the current localization effect, the nonuniform distribution of the heterojunction current density over the heterostructure area is determined. The non-stationary thermal conductivity equation with temperature-dependent current density flowing into the heterojunction is solved by the numerical–analytical iterative method. Based on the developed model, the current density, temperature, and thermomechanical stress distributions for the heterojunction plane are determined.

Received: 03.03.2015
Accepted: 27.11.2015


 English version:
Semiconductors, 2016, 50:8, 1079–1084

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