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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 7, Pages 893–899 (Mi phts6408)

This article is cited in 2 papers

Electronic properties of semiconductors

Electron exchange between tin impurity $U^-$ centers in PbS$_{z}$Se$_{1-z}$ alloys

A. V. Marchenkoa, E. I. Terukovb, P. P. Seregina, A. N. Rasnjuka, V. S. Kiseleva

a Herzen State Pedagogical University of Russia, St. Petersburg
b Ioffe Institute, St. Petersburg

Abstract: Using emission $^{119mm}$Sn($^{119m}$Sn) and $^{119}$Sb($^{119m}$Sn) Mössbauer spectroscopy, it is shown that impurity tin atoms in PbS$_{z}$Se$_{1-z}$ alloys substitute lead atoms and are two-electron donors with negative correlation energy ($U^-$ centers). It is found that the energy levels related to impurity tin atoms are in the lower half of the band gap at $z\ge$ 0.5 against the background of allowed valence-band states at $z\le$ 0.4. The electron exchange between neutral and doubly ionized tin $U^-$ centers in partially compensated Pb$_{0.99}$Sn$_{0.005}$Na$_{0.005}$SzSe$_{1-z}$ alloys is studied. The activation energy of this process decreases from 0.111(5) eV for a composition with $z$ = 1 to 0.049(5) eV for compositions with $c\le$ 0. For all $z$, the exchange is implemented via the simultaneous transfer of two electrons using delocalized valence-band states.

Received: 10.12.2015
Accepted: 11.01.2016


 English version:
Semiconductors, 2016, 50:7, 876–882

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