RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 6, Pages 807–810 (Mi phts6443)

This article is cited in 5 papers

Amorphous, glassy, organic semiconductors

Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

E. V. Ivanovaa, A. A. Sitnikovaa, O. V. Aleksandrovb, M. V. Zamoryanskayaa

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"

Abstract: It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing ($T$ = 1150$^\circ$C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters are formed. This method of silicon-nanocluster formation is suggested for the first time.

Received: 03.11.2015
Accepted: 19.11.2015


 English version:
Semiconductors, 2016, 50:6, 791–794

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024