A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, “Method for increasing the carrier mobility in the channel of the 4<nobr>$H$</nobr>-SiC MOSFET”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 6,Pages <nobr>839

Semiconductor physics

Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET

A. I. Mikhaylov^a, A. V. Afanasyev^a, V. A. Ilyin^a, V. V. Luchinin^a, S. A. Reshanov^b, A. Schöner^b

^a Saint Petersburg Electrotechnical University "LETI"
^b Ascatron AB, Kista, Sweden

Abstract: A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4$H$ polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-dioxide layer. Together with increasing carrier mobility, the average breakdown field strength decreases as compared with the gate insulator thermally grown in an atmosphere of N$_2$O.

Received: 03.12.2015
Accepted: 08.12.2015