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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 6, Pages 843–847 (Mi phts6450)

This article is cited in 3 papers

Semiconductor physics

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

I. M. Gadzhievab, M. S. Buyaloab, A. E. Gubenkoc, A. Yu. Egorovabd, A. A. Usikovaa, N. D. Il'inskayaa, A. V. Lyutetskiya, Yu. M. Zadiranova, E. L. Portnoĭa

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Innolume GmbH, Dortmund, Germany
d Connector Optics LLC, St. Petersburg

Abstract: The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

Received: 08.12.2015
Accepted: 14.12.2015


 English version:
Semiconductors, 2016, 50:6, 828–831

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