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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 5, Pages 600–606 (Mi phts6458)

This article is cited in 7 papers

Surface, interfaces, thin films

Study of the correlation properties of the surface structure of $nc$-Si/$a$-Si : H films with different fractions of the crystalline phase

A. V. Alpatova, S. P. Vikhrova, A. G. Kazanskiib, V. L. Lyaskovskiicd, N. B. Rybina, N. V. Rybinaa, P. A. Forshb

a Ryazan State Radio Engineering University
b Lomonosov Moscow State University
c The All Russian Scientific-Research Institute for Optic Physical Metrology of Government Standard, Moscow
d Moscow Institute of Electronics and Mathematics — Higher School of Economics

Abstract: The correlation properties of the structure of $nc$-Si/$a$-Si : H films with different volume fractions of the crystalline phase are studied using 2D detrended fluctuation analysis. Study of the surface relief of experimental samples showed that with increasing in volume fraction of the crystalline phase in the $nc$-Si/$a$-Si : H films, the size and number of nanoclusters on their surface grow. The size of Si nanocrystals in the $a$-Si:H matrix (6–8 nm) indicates the formation of coarse nanoclusters due to the self-organization of Si nanocrystals in groups under laser radiation. According to 2D detrended fluctuation analysis data, the number of correlation vectors (harmonic components) in the $nc$-Si/$a$-Si : H film structure increased with an increase in the nanocrystal fraction in the films.

Keywords: Crystalline Phase, Correlation Property, Surface Relief, Harmonic Component, Silicon Nanocrystals.

Received: 16.06.2015
Accepted: 26.10.2015


 English version:
Semiconductors, 2016, 50:5, 590–595

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