A. Yu. Egorov, L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, V. N. Nevedomskiy, V. E. Bugrov, “Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5,Pages <nobr>624

This article is cited in 2 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

A. Yu. Egorov^abc, L. Ya. Karachinsky^abc, I. I. Novikov^bac, A. V. Babichev^acb, V. N. Nevedomskiy^a, V. E. Bugrov^b

^a Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Connector Optics LLC, St. Petersburg

Abstract: It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range, can be fabricated by molecular-beam epitaxy. The structural and optical properties of the heterostructures are studied by X-ray diffraction analysis, transmission electron microscopy, and the photoluminescence method. Comparative analysis of the integrated photoluminescence intensity of the heterostructures and a reference sample confirm the high efficiency of radiative recombination in the heterostructures. It is confirmed by transmission electron microscopy that dislocations do not penetrate into the active region of the metamorphic heterostructures, where the radiative recombination of carriers occurs.

Keywords: GaAs, Pump Power, Radiative Recombination, Transmission Electron Micro, Distribute Bragg Reflector.

Received: 10.11.2015
Accepted: 16.11.2015