Isothermal current–voltage characteristics of high-voltage 4$H$-SiC junction barrier Schottky rectifiers

The forward-pulse isothermal current–voltage characteristics of 4$H$-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from -80 to +90$^\circ$C (193–363 K) up to current densities $j$ of $\sim$5600 A/cm$^2$ at -80$^\circ$C and 3000 A/cm$^2$ at +90$^\circ$C. In these measurements, the overheating of the structures relative to the ambient temperature, $\Delta T$, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an $S$-type differential resistance. The pulsed isothermal current–voltage characteristics are also measured at a temperature of 77 K.