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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 5, Pages 674–678 (Mi phts6471)

This article is cited in 9 papers

Semiconductor physics

Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

A. E. Zhukovab, G. E. Cirlinbca, R. R. Reznikda, Yu. B. Samsonenkoca, A. I. Khrebtova, M. A. Kaliteevskiiea, K. A. Ivanovea, N. V. Kryzhanovskayaa, M. V. Maksimova, Zh. I. Alferovab

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint-Petersburg Scientific Center, Russian Academy of Sciences
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d Peter the Great St. Petersburg Polytechnic University
e St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The results obtained in a study of the structural and optical properties of GaAs/AlGaAs heterostructures with 228 quantum cascades, grown by molecular-beam epitaxy, and in a simulation of interband optical transitions and transitions between the energy levels of a cascade are presented.

Keywords: GaAs, Oscillator Strength, Quantum Well, Interband Optical Transition, Multilayer HETEROSTRUCTURES.

Received: 27.10.2015
Accepted: 02.11.2015


 English version:
Semiconductors, 2016, 50:5, 662–666

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