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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 4, Pages 447–453 (Mi phts6483)

This article is cited in 4 papers

Electronic properties of semiconductors

Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation

A. N. Akimov, A. E. Klimov, I. G. Neizvestnyi, V. N. Shumskii, V. S. Epov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The time dependences of variations in the photoconductivity of PbSnTe:In films in the range of $T\approx$ 19–25 K upon interband excitation are studied. It is found that the character of conductivity relaxation after switch-off of illumination depends on the duration and intensity of the preceding illumination. In this case, the characteristic times of relaxation for various modes of illumination can differ by more than an order of magnitude. The obtained results are discussed in the context of a model assuming the presence of a quasicontinuous spectrum of capture levels in the band gap of PbSnTe:In and also a possible effect on the parameters of these levels of the ferroelectric phase transition, the temperature of which is found to be in the temperature range under study.

Keywords: Topological Insulator, Trapping Center, Ferroelectric Phase Transition, Trap Level, Optical Generation.

Received: 17.09.2015
Accepted: 21.09.2015


 English version:
Semiconductors, 2016, 50:4, 440–446

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