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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 4, Pages 501–508 (Mi phts6493)
This article is cited in 12 papers

Micro- and nanocrystalline, porous, composite semiconductors

Polytype inclusions and polytype stability in silicon-carbide crystals

D. D. Avrova, A. O. Lebedevb, Yu. M. Tairova

a Saint Petersburg Electrotechnical University "LETI"
b Ioffe Institute, St. Petersburg

Abstract: On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots of grown 4H and 6H silicon-carbide compounds.

Keywords: Silicon Carbide, Elementary Step, Polytype Structure, Hexagonal Polytype, Ingot Growth.

Received: 15.10.2015
Accepted: 19.10.2015


 English version: Semiconductors, 2016, 50:4, 494–501

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© Steklov Math. Inst. of RAS, 2024