E. A. Tarasova, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, Yu. N. Sveshnikov, V. I. Egorkin, V. A. Ivanov, G. V. Medvedev, D. S. Smotrin, “Study of the electron distribution in GaN and GaAs after <nobr>$\gamma$</nobr>-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3,Pages <nobr>331

This article is cited in 6 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation

E. A. Tarasova^a, A. V. Hananova^a, S. V. Obolensky^a, V. E. Zemlyakov^b, Yu. N. Sveshnikov^c, V. I. Egorkin^c, V. A. Ivanov^d, G. V. Medvedev^d, D. S. Smotrin^ad

^a Lobachevsky State University of Nizhny Novgorod
^b National Research University of Electronic Technology
^c JSC Elma-Malachit, Moscow, Zelenograd
^d NPP "Salyut", Nizhny Novgorod, Russia

Abstract: The results of experimental studies of the parameters of GaN and GaAs structures before and after $\gamma$-neutron irradiation are reported. A special set of test diodes making it possible to reduce the error in the results of measuring the parameters of the structures, which is important in the design and optimization of the structure of semiconductor devices, is suggested.

Keywords: GaAs, Electron Distribution, Radiation Defect, Semiconductor Structure, Doping Profile.

Received: 07.07.2015
Accepted: 17.07.2015