Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties

The technology of the growth of Si, Ge, and Si$_{1-x}$Ge$_{x}$ layers by molecular-beam epitaxy with the use of a sublimation source of monoisotopic $^{30}$Si or $^{28}$Si and/or gas sources of monogermane $^{74}$GeH$_{4}$ is demonstrated. All of the epitaxial layers are of high crystal quality. The secondary-ion mass spectroscopy data and Raman data suggest the high isotopic purity and structural perfection of the $^{30}$Si, $^{28}$Si, $^{74}$Ge, and $^{30}$Si$_{1-x}^{74}$Ge$_{x}$ layers. The $^{30}$Si layers doped with Er exhibit an efficient photoluminescence signal.